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  4. Surpassing the Exciton Diffusion Limit in Single-Walled Carbon Nanotube Sensitized Solar Cells
 
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Surpassing the Exciton Diffusion Limit in Single-Walled Carbon Nanotube Sensitized Solar Cells

Publikationstyp
Journal Article
Date Issued
2016-12-27
Sprache
English
Author(s)
Koleilat, Ghada I.  
Vosgueritchian, Michael  
Lei, Ting  
Zhou, Yan  
Lin, Debora W.  
Lissel, Franziska  
Lin, Pei  
To, John W.F.  
Xie, Tian  
England, Kemar  
Zhang, Yue  
Bao, Zhenan  
TORE-URI
http://hdl.handle.net/11420/15178
Journal
ACS nano  
Volume
10
Issue
12
Start Page
11258
End Page
11265
Citation
ACS Nano 10 (12): 11258-11265 (2016-12-27)
Publisher DOI
10.1021/acsnano.6b06358
Scopus ID
2-s2.0-85008192132
Semiconducting single-walled carbon nanotube (s-SWNT) light sensitized devices, such as infrared photodetectors and solar cells, have recently been widely reported. Despite their excellent individual electrical properties, efficient carrier transport from one carbon nanotube to another remains a fundamental challenge. Specifically, photovoltaic devices with active layers made from s-SWNTs have suffered from low efficiencies caused by three main challenges: the overwhelming presence of high-bandgap polymers in the films, the weak bandgap offset between the LUMO of the s-SWNTs and the acceptor C60, and the limited exciton diffusion length from one SWNT to another of around 5 nm that limits the carrier extraction efficiency. Herein, we employ a combination of processing and device architecture design strategies to address each of these transport challenges and fabricate photovoltaic devices with s-SWNT films well beyond the exciton diffusion limit of 5 nm. While our solution processing method minimizes the presence of undesired polymers in our active films, our interfacial designs led to a significant increase in current generation with the addition of a highly doped C60 layer (n-doped C60), resulting in increased carrier separation efficiency from the s-SWNTs films. We create a dense interconnected nanoporous mesh of s-SWNTs using solution shearing and infiltrate it with the acceptor C60. Thus, our final engineered bulk heterojunction allows carriers from deep within to be extracted by the C60 registering a 10-fold improvement in performance from our preliminary structures.
Subjects
diffusion length
n-doped C 60
nanoporous matrix
single-walled carbon nanotubes
solution shearing
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