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Charakterisierung integriert-optischer Silizium-Wellenleiter
Citation Link: https://doi.org/10.15480/882.1123
Other Titles
Characterizing integrated silicon waveguides
Publikationstyp
Doctoral Thesis
Date Issued
2013
Sprache
German
Author(s)
Advisor
Title Granting Institution
Technische Universität Hamburg
Place of Title Granting Institution
Hamburg
Examination Date
2013-05-14
TORE-DOI
In this work, measurement techniques for the characterization of integrated optical waveguides based on the SOI-technology are presented. Silicon nanophotonic waveguides are investigated regarding their linear waveguide losses as well as the lifetime of free charge carriers. A novel measurement technique based on optical frequency-domain reflectometry (OFDR) for the evaluation of the longitudinal attenuation profile of silicon waveguides is introduced. The non-reciprocal behaviour of Raman scattering in silicon waveguides is experimentally shown. Furthermore, a technique for the implementation of periodically structured photoresists on silicon substrates based on DUV-lithography with diffraction gratings is demonstrated.
Subjects
OFDR
SOI
Silicon
SOI
Silicon Photonics
OFDR
Raman
Integrated Optics
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