Charakterisierung integriert-optischer Silizium-Wellenleiter
Characterizing integrated silicon waveguides
Title Granting Institution
Technische Universität Hamburg
Place of Title Granting Institution
In this work, measurement techniques for the characterization of integrated optical waveguides based on the SOI-technology are presented. Silicon nanophotonic waveguides are investigated regarding their linear waveguide losses as well as the lifetime of free charge carriers. A novel measurement technique based on optical frequency-domain reflectometry (OFDR) for the evaluation of the longitudinal attenuation profile of silicon waveguides is introduced. The non-reciprocal behaviour of Raman scattering in silicon waveguides is experimentally shown. Furthermore, a technique for the implementation of periodically structured photoresists on silicon substrates based on DUV-lithography with diffraction gratings is demonstrated.