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Modeling of CMOS integrated strain sensors and sensitivity enhanced readout architecture
Publikationstyp
Journal Article
Date Issued
2024-02-01
Sprache
English
Author(s)
Volume
71
Issue
2
Start Page
583
End Page
594
Citation
IEEE Transactions on Circuits and Systems I: Regular Papers 71 (2): 583-594 (2024-02-01)
Publisher DOI
Scopus ID
Publisher
Institute of Electrical and Electronics Engineers Inc.
Integrating sensors within a complete readout system on a single die has become essential to the More-than-Moore philosophy. Mechanical stress, as one of the physical quantities of potential interest, provides various information from simple static to dynamic load. Integration of piezoresistive elements within a complete CMOS system has been achieved in many ways, and ground-laying effects have been studied and described in detail. To bring the mechanical and electrical domains closer together, a new concept is presented that allows an analytical and simulation-based approximation of the sensors’ behavior due to applied mechanical stress as part of established concepts in electronics. It is evaluated based on measured state-of-the-art sensor implementations and used to bring up an alternative architecture with enhanced and on-the-fly adaptive sensitivity. Simulations are used to then further evaluate any model errors due to second-order effects that have been neglected within the design process.
Subjects
adjustable current mirror
integrated sensing
Piezoresistance
piezoresistivity
Sensitivity
sensor model
Sensors
Sensor systems
Strain measurement
Stress
Transducers
Transistors
DDC Class
620: Engineering