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Effect of etching parameter on pore size and porosity of electrochemically formed nanoporous silicon
Publikationstyp
Journal Article
Date Issued
2007-06-06
Sprache
English
Author(s)
Journal
Volume
2007
Start Page
1
End Page
4
Article Number
89718
Citation
Journal of Nanomaterials 2007: 89718 1-4 (2007-08-01)
Publisher DOI
Scopus ID
The most common fabrication technique of porous silicon (PS) is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF) acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.
DDC Class
530: Physik
More Funding Information
Part of this work has been supported within the DFG priority Program 1164, Nano- and Microfluidics, Grant no. Hu 850/2.