Comparison of second-harmonic matching of AlGaN/GaN HEMTs at K-band

Start Page
400
End Page
403
Article Number
6997877
Citation
Conference Proceedings; EuMIC 2014 9th European Microwave Integrated Circuits Conference: 6997877, 400-403
Contribution to Conference
9th European Microwave Integrated Circuits Conference, EuMIC 2014  
Publisher DOI
10.1109/EuMIC.2014.6997877
Scopus ID
2-s2.0-84921283484
Publisher
IEEE
ISBN
978-1-4799-5473-5
978-2-87487-036-1
This paper presents a comparative study of input and output second-harmonic matching applied to 0.25μm Al-GaN/GaN HEMTs on s.-i. SiC substrates. The study focuses on the technology's use at K-band, which is close to the maximum usable frequency for high-power amplifier design. Four power amplifier MMICs using different second-harmonic matching schemes are compared in terms of PAE and output power. The results show the relative improvement of power and efficiency that is gained by the inclusion of second-harmonic matching in the design but also the impact on the power/efficiency bandwidth.
Subjects
Gallium nitride | high power amplifiers | K-band | MMICs | satellite communication
DDC Class
600: Technology