Reliability of ultra thin oxide and nitride films in the 1 nm to 2 nm range

Publikationstyp
Journal Article
Date Issued
1999
Sprache
English
Author(s)
Yuwono, B.
Schloesser, T.
Gschwandtner, A.
Innertsberger, G.
Grassl, A.
Olbrich, A.
Krautschneider, Wolfgang  
Integrierte Schaltungen E-9  
TORE-URI
https://hdl.handle.net/11420/47946
Journal
Microelectronic engineering  
Volume
48
Issue
1
Start Page
51
End Page
54
Citation
Microelectronic Engineering 48 (1): 51-54 (1999)
Publisher DOI
10.1016/S0167-9317(99)00336-6
Scopus ID
2-s2.0-0033190144
Publisher
Elsevier
Scaled-down MOSFETs of the 16 Gbit generation and beyond require a gate dielectric thickness less than 2 nm. Reliability of ultra thin dielectrics were investigated in DC and AC stress at room and elevated temperatures. Results showed that due to the exponential increase of the breakdown change QBD at reduced gate voltages, it can be expected that MOS transistors of the 16 Gbit generation with ultra thin dielectric gate films will meet the 10 years reliability specifications.
DDC Class
621.3: Electrical Engineering, Electronic Engineering