Options
A low-noise saturation-stacked bandgap reference for image sensor applications
Publikationstyp
Conference Paper
Date Issued
2014
Sprache
English
Author(s)
Süss, Andreas
Kravchenko, Andrey
Hosticka, Bedrich
Start Page
247
End Page
250
Article Number
6966450
Citation
2014 International Semiconductor Conference (CAS 2014), Sinaia, Romania, 13-15 October 2014
Contribution to Conference
Publisher DOI
Scopus ID
Publisher
IEEE
ISBN
978-1-4799-7142-8
978-1-4799-3916-9
978-1-4799-3917-6
A novel architecture for a bandgap voltage reference is presented in this paper. The voltage reference, designed for image sensor applications, is primarily targeted for a low-noise operation along with other practical constraints such as high power supply rejection, temperature immunity and short start-up time. The analysis and operation of the circuit is discussed and the trade-offs involved in the implementation aspects are examined. The measurement results of the fabricated circuit in a 0.35-μm CMOS process show a noise voltage level of 450 nV/√Hz at 10 Hz, a temperature coefficient of 14 ppm/K and a PSRR of 52 dB.
Subjects
image sensors
low-noise
saturation-stacked
DDC Class
621.3: Electrical Engineering, Electronic Engineering