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Experimental study and modeling of the temperature dependence of soft breakdown conduction in ultrathin gate oxides
Publikationstyp
Conference Paper
Date Issued
2003
Sprache
English
Author(s)
Arbeitsbereich Mikroelektronik (H 4-08)
Volume
2003-January
Start Page
580
End Page
581
Article Number
1197815
Citation
In: 2003 IEEE International Reliability Physics Symposium proceedings : 41st annual ; Dallas, Texas, March 30 - April 4 2003. - Piscataway, NJ : IEEE Service Center, 2003. - S.580-581
Contribution to Conference
Publisher DOI
Scopus ID
Publisher
IEEE
ISBN
0780376498
In this work, we focus our interest on the temperature dependence of soft breakdown conduction (SBD), mainly in the range in which real devices are commonly operated (-20°C<T<160°C). A thorough experimental study involving samples with different oxide thicknesses and substrate types is presented, and the results are interpreted in terms of an extended version of the quantum point contact model (QPC) for the non-zero temperature case. Even though several approaches attempting to explain the SBD I-V characteristics have been proposed, analytical modeling of its temperature dependence has always been restricted to a single bias condition. In contrast, we provide a simple parameterization of the experimental data which accounts for both I-V and I-T characteristics within a consistent framework based on the physics of mesoscopic conductors. The magnitude of the current flowing through the SBD spot essentially depends on the barrier height encountered by incoming electrons, while the shape of the I-V characteristics is dictated by the particular features of the spot and the potential drop distribution.
Subjects
Analytical models
Conductors
Electric breakdown
Electrodes
Electrons
Physics
Shape
Temperature dependence
Temperature distribution
Threshold voltage
DDC Class
621.3: Electrical Engineering, Electronic Engineering