Stabilization of higher- κ tetragonal Hf O2 by Si O2 admixture enabling thermally stable metal-insulator-metal capacitors

Böscke, T. S.; Govindarajan, S.; Kirsch, P. D.; Hung, P. Y.; Krug, C.; Lee, B. H.; Heitmann, J.; Schröder, U.; Pant, G.; Gnade, B. E.; Krautschneider, Wolfgang

Stabilization of higher- κ tetragonal Hf O2 by Si O2 admixture enabling thermally stable metal-insulator-metal capacitors

Publikationstyp

Journal Article

Publikationsdatum

2007-08-24

Sprache

English

Author

Böscke, T. S.

Govindarajan, S.

Kirsch, P. D.

Hung, P. Y.

Krug, C.

Lee, B. H.

Heitmann, J.

Schröder, U.

Pant, G.

Gnade, B. E.

Krautschneider, Wolfgang

Nano- und Medizinelektronik E-9 (H)

TORE-URI

https://hdl.handle.net/11420/47998

Enthalten in

Applied physics letters

Volume

91

Issue

7

Article Number

072902

Citation

Applied Physics Letters 91 (7): 072902 (2007-08-13)

Publisher DOI

10.1063/1.2771376

Scopus ID

2-s2.0-34548039733

Publisher

American Institut of Physics

The authors report the relationship between Hf O2 crystalline phase and the resulting electrical properties. Crystallization of amorphous Hf O2 into the monoclinic phase led to a significant increase in leakage current and formation of local defects. Admixture of 10% Si O2 avoided formation of these defects by stabilization of the tetragonal phase, and concurrently increased the permittivity to 35. This understanding enabled fabrication of crystalline Hf O2 based metal-insulator-metal capacitors able to withstand a thermal budget of 1000 °C while optimizing capacitance equivalent thickness (<1.3 nm) at low leakage [J (1 V) < 10-7 A cm2]. © 2007 American Institute of Physics.

DDC Class

621.3: Electrical Engineering, Electronic Engineering

Options

Stabilization of higher- κ tetragonal Hf O2 by Si O2 admixture enabling thermally stable metal-insulator-metal capacitors