Stabilization of higher- κ tetragonal Hf O2 by Si O2 admixture enabling thermally stable metal-insulator-metal capacitors

Publikationstyp
Journal Article
Date Issued
2007-08-24
Sprache
English
Author(s)
Böscke, Tim S.  
Govindarajan, S.
Kirsch, Paul D.
Hung, Pui Yee
Krug, Cristiano
Lee, Byoung-hun
Heitmann, Johannes
Schröder, Uwe Paul
Pant, Gaurang K.
Gnade, Bruce E.
Krautschneider, Wolfgang  
Nano- und Medizinelektronik E-9 (H)  
TORE-URI
https://hdl.handle.net/11420/47998
Journal
Applied physics letters  
Volume
91
Issue
7
Article Number
072902
Citation
Applied Physics Letters 91 (7): 072902 (2007-08-13)
Publisher DOI
10.1063/1.2771376
Scopus ID
2-s2.0-34548039733
Publisher
American Institut of Physics
The authors report the relationship between Hf O2 crystalline phase and the resulting electrical properties. Crystallization of amorphous Hf O2 into the monoclinic phase led to a significant increase in leakage current and formation of local defects. Admixture of 10% Si O2 avoided formation of these defects by stabilization of the tetragonal phase, and concurrently increased the permittivity to 35. This understanding enabled fabrication of crystalline Hf O2 based metal-insulator-metal capacitors able to withstand a thermal budget of 1000 °C while optimizing capacitance equivalent thickness (<1.3 nm) at low leakage [J (1 V) < 10-7 A cm2].
DDC Class
621.3: Electrical Engineering, Electronic Engineering