Physical foundation of a recently proposed schottky-contact model

Publikationstyp
Journal Article
Date Issued
2011-03-01
Sprache
English
Author(s)
Schröder, Dietmar  
Integrierte Schaltungen E-9  
TORE-URI
https://hdl.handle.net/11420/44210
Journal
IEEE transactions on electron devices  
Volume
58
Issue
3
Start Page
874
End Page
875
Article Number
5667056
Citation
IEEE Transactions on Electron Devices 58 (3): 874-875 (2011)
Publisher DOI
10.1109/TED.2010.2093902
Scopus ID
2-s2.0-79952037158
Publisher
IEEE
The goal of this correspondence is to supplement the Schottky-contact model proposed in "A Generalized Drift-Diffusion Model for Rectifying Schottky Contact Simulation," IEEE Transactions on Electron Devices, vol. 57, no. 7, July 2010, with a solid physical foundation by rigorously rederiving it from an analytical solution of Boltzmann's equation in the boundary layer.
Subjects
Schottky barriers
semiconductor device modeling
DDC Class
621: Applied Physics