Static model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect

Physics-based models of organic field-effect transistors (OFETs) which can be used for computer-aided simulation of organic integrated circuits were investigated. For this purpose hybrid OFETs with poly(3-hexylthiophene-2,5-diyl) as the semiconductor were fabricated and characterized. The differential drain-source resistance reveals the need for a unified consideration of a gate-voltage-dependent mobility and of the depletion effect. We avoid neglecting the capacitance of the insulator and the semiconductor which would have otherwise introduced restrictions. The analytic modeling yields a compact static equivalent circuit diagram. © 2006 American Institute of Physics.

DDC Class

621.3: Electrical Engineering, Electronic Engineering

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Static model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect