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  4. Static model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect
 
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Static model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect

Publikationstyp
Journal Article
Date Issued
2006-06-05
Sprache
English
Author(s)
Schliewe, Robert Roman  
Yildirim, Faruk Altan  
Optische und Elektronische Materialien E-12  
Emden, Walter von  
Witte, R.
Bauhofer, Wolfgang  
Optische und Elektronische Materialien E-12  
Krautschneider, Wolfgang  
Nano- und Medizinelektronik E-9 (H)  
TORE-URI
https://hdl.handle.net/11420/48122
Journal
Applied physics letters  
Volume
88
Issue
23
Article Number
233514
Citation
Applied Physics Letters 88 (23): 233514 (2006-06-05)
Publisher DOI
10.1063/1.2211148
Scopus ID
2-s2.0-33745015728
Publisher
American Institut of Physics
Physics-based models of organic field-effect transistors (OFETs) which can be used for computer-aided simulation of organic integrated circuits were investigated. For this purpose hybrid OFETs with poly(3-hexylthiophene-2,5-diyl) as the semiconductor were fabricated and characterized. The differential drain-source resistance reveals the need for a unified consideration of a gate-voltage-dependent mobility and of the depletion effect. We avoid neglecting the capacitance of the insulator and the semiconductor which would have otherwise introduced restrictions. The analytic modeling yields a compact static equivalent circuit diagram. © 2006 American Institute of Physics.
DDC Class
621.3: Electrical Engineering, Electronic Engineering
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