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  4. Single-event effect responses of integrated panar inductors in 65 nm CMOS
 
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Single-event effect responses of integrated panar inductors in 65 nm CMOS

Citation Link: https://doi.org/10.15480/882.4025
Publikationstyp
Journal Article
Date Issued
2021-10-18
Sprache
English
Author(s)
Biereigel, Stefan  
Kulis, Szymon  
Leroux, Paul  
Moreira, Paulo Rodrigues Simoes  
Kölpin, Alexander  orcid-logo
Prinzie, Jeffrey  
Institut
Hochfrequenztechnik E-3  
TORE-DOI
10.15480/882.4025
TORE-URI
http://hdl.handle.net/11420/11057
Journal
IEEE transactions on nuclear science  
Volume
68
Issue
11
Start Page
2587
End Page
2597
Citation
IEEE Transactions on Nuclear Science 68 (11): 2587-2597 (2021)
Publisher DOI
10.1109/TNS.2021.3121029
Scopus ID
2-s2.0-85118267107
Publisher
IEEE
This article describes a previously unreported single-event radiation effect in spiral inductors manufactured in a commercial CMOS technology when subjected to ionizing radiation. Inductors play a major role as the component determining the frequency of LC tank oscillators, which is why any radiation effects in these passive components can have detrimental impact on the performance of clock generation circuits. Different experiments performed to localize and characterize the Single-Event Effect (SEE) response in a radiation-hardened PLL circuit are discussed and presented together with an hypothesis for the underlying physical mechanism.
Subjects
Inductors
Inductors
Ions
Metal-Insulator Structures
Metals
Oscillators
Phase locked loops
Phase-Locked Loops
Radiation effects
Radiation Effects
Sensitivity
Silicon
SiO2
DDC Class
600: Technik
Publication version
publishedVersion
Lizenz
https://creativecommons.org/licenses/by/4.0/
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