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Single-event effect responses of integrated panar inductors in 65 nm CMOS
Citation Link: https://doi.org/10.15480/882.4025
Publikationstyp
Journal Article
Date Issued
2021-10-18
Sprache
English
Institut
TORE-DOI
Volume
68
Issue
11
Start Page
2587
End Page
2597
Citation
IEEE Transactions on Nuclear Science 68 (11): 2587-2597 (2021)
Publisher DOI
Scopus ID
Publisher
IEEE
This article describes a previously unreported single-event radiation effect in spiral inductors manufactured in a commercial CMOS technology when subjected to ionizing radiation. Inductors play a major role as the component determining the frequency of LC tank oscillators, which is why any radiation effects in these passive components can have detrimental impact on the performance of clock generation circuits. Different experiments performed to localize and characterize the Single-Event Effect (SEE) response in a radiation-hardened PLL circuit are discussed and presented together with an hypothesis for the underlying physical mechanism.
Subjects
Inductors
Inductors
Ions
Metal-Insulator Structures
Metals
Oscillators
Phase locked loops
Phase-Locked Loops
Radiation effects
Radiation Effects
Sensitivity
Silicon
SiO2
DDC Class
600: Technik
Publication version
publishedVersion
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Single-Event_Effect_Responses_of_Integrated_Planar_Inductors_in_65-nm_CMOS.pdf
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