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Nonlinear diffusion potential induced anti-ohmic effect
Publikationstyp
Journal Article
Publikationsdatum
2020-04-29
Sprache
English
Author
Wang, Shuanhu
Tian, Yingyi
Guo, Huixin
Li, Shuqin
Zhao, Yang
Wang, Jianyuan
Zou, Lvkuan
Jin, Kexin
Enthalten in
Volume
53
Issue
18
Article Number
185304
Citation
Journal of Physics D: Applied Physics 53 (18): 185304 (2020)
Publisher DOI
Scopus ID
Publisher
IOP
Novel transport behavior of carriers always generates new types of electronic elements. For traditional resistor element, the voltage is directly proportional to drift current regardless of Joule heat, which can be credibly described by Ohm's law. There are still some new types of materials such as memristor and Weyl metal that do not follow Ohm's law, and they have drawn significant attention. In this work, we theoretically and experimentally investigated the transport behavior of diffusion current near the interface of the silicon-based Schottky junction. It is clearly observed that the output voltage in the diffusion path could be higher (lower) when the resistance was lower (higher), even under identical diffused current. Deep theoretical analysis is also carried out, which is found to be in good agreement with the experimental results. These results suggest that the transport behavior of diffusion carriers is quite different from the drift carriers. This study may provide a foundation for fundamental research and device application based on the transport of diffusion carriers near the interface.
Schlagworte
anti-ohmic effect
diffusion current
lateral photovoltage
novel transport behavior
Schottky junction
DDC Class
540: Chemistry
620: Engineering