A 41.5 dBm Broadband AlGaN/GaN HEMT Balanced Power Amplifier at K-Band

Start Page
164
End Page
167
Citation
16th European Microwave Integrated Circuits Conference (EuMIC 2021)
Contribution to Conference
16th European Microwave Integrated Circuits Conference, EuMIC 2021  
Publisher DOI
10.23919/EuMIC50153.2022.9783996
Scopus ID
2-s2.0-85133013885
ISBN of container
978-287487064-4
This paper describes the design and characterization of a broadband balanced power amplifier (BPA) MMIC at K-band. The utilized technology is the 0.25μm AlGaN/GaN HEMT process provided by Fraunhofer IAF. The BPA is designed as a two-stage power amplifier (PA) with a total gate width (TGW) of 4.32mm. More than 41.5dBm of output power with a power-added efficiency (PAE) greater than 21% are demonstrated between 21 and 23GHz. Furthermore, the BPA exhibits a maximum saturated output power of 17W associated with 22% of PAE at 22.5GHz. A peak PAE of 30% is realized at a drain supply voltage of 28V.
Subjects
Balanced power amplifier
gallium nitride
K-band
MMIC
satellite communication