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Charge-based capacitance measurements (CBCM) on MOS devices
Publikationstyp
Journal Article
Date Issued
2002-03-01
Sprache
English
Author(s)
Arbeitsbereich Mikroelektronik (H 4-08)
Volume
2
Issue
1
Start Page
9
End Page
12
Citation
IEEE Transactions on Device and Materials Reliability 2 (1): 9-12 (2002)
Publisher DOI
Scopus ID
Publisher
IEEE
A new simple method of measuring capacitance-voltage characteristics of MOS devices is presented. Proceeding from the charge-based capacitance measurement technique suggested recently, a compact test structure with high resolution has been developed, which only requires measurement of dc quantities. The method was tested on a 0.6-μm CMOS process with small and large area capacitors and compared to well-known high-frequency capacitance-voltage results. Beside using a reference structure, a second means of extracting parasitic effects is demonstrated for small structures. The test structure allows measurements in a wide frequency range with high accuracy and low noise contribution at small capacitance levels. © 2002 IEEE.
Subjects
Low-level capacitance
Measurement technique
Test structure
DDC Class
621.3: Electrical Engineering, Electronic Engineering