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Energetic distributions of interface states Dit( psi s) of Mos transistors in extension of Kuhn's quasistatic C(V)-method
Publikationstyp
Journal Article
Date Issued
1983
Sprache
English
Volume
37
Issue
9/10
Start Page
293
End Page
298
Citation
International journal of electronics and communications = AEÜ: Archiv fur Elektronik und Ubertragungstechnik 37 (9/10): 293-298 (1983)
Scopus ID
Publisher
Hirzel Verlag
Kuhn's quasi-static C(V)-method has been extended to MOS transistors by considering the capacitances of the source and drain p-n junctions additionally to the MOS varactor circuit model. The width of the space charge layers w( psi //s) is calculated as a function of the surface potential psi //s and applied to the MOS capacitance as a function of the gate voltage. Capacitance behavior for different channel length is presented as a model and compared to measurement results and evaluations of energetic distributions of interface states D//i//t ( psi //s) for MOS transistor and MOS varactor on the same chip.
DDC Class
621.3: Electrical Engineering, Electronic Engineering