Interface analysis of atomic layer deposited-TiN gate electrodes on ultrathin SiO₂layers

Journal
Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena  
Volume
21
Issue
3
Start Page
931
End Page
935
Citation
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (3): 931-935 (2003)
Publisher DOI
10.1116/1.156534110.1116/1.1565341
Scopus ID
2-s2.0-0038794887
Publisher
AVS Science and Technology Society
A study was performed on the interface analysis of atomic layer deposited-TiN gate electrodes on ultrathin SiO₂layers. The temperature dependence of the C-V curves was discussed and an unintended titanium-rich layer at the interface, which disappears after annealing above 800 °C was indicated. It was found by leakage current analysis that a thermal stability up to 800°C was obtained for TiN gates on ultrathin SiO₂ layers with an enhanced tunneling current as compared to simulations.
DDC Class
621.3: Electrical Engineering, Electronic Engineering