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Analytical extraction of via near-field coupling using a multiple scattering approach
Publikationstyp
Journal Article
Publikationsdatum
2013
Sprache
English
Institut
TORE-URI
Start Page
1
End Page
4
Article Number
6558322
Citation
2013 17th IEEE Workshop on Signal and Power Integrity, SPI 2013 : 12 - 15 May 2013, Paris. - Piscataway, NJ : IEEE, 2013. - Artikel-Nr.: 6558322
Contribution to Conference
Publisher DOI
Scopus ID
Publisher
IEEE
This paper studies the near-field coupling between closely spaced vias. The near-field coupling is a consequence of non-propagating (higher order) radial waveguide modes. Although it is a second order effect for typical via geometries in printed circuit boards due to the strong attenuation of these modes with distance, this coupling can become relevant for special cases in high density designs. In this paper we apply a multiple scattering approach to carry out an accurate analysis of two closely coupled vias, and obtain the effective near- and far-end coupling capacitances for this case. An evaluation of the coupling capacitances shows how the near-field coupling depends on the via separation and other geometrical parameters. Based on this evaluation, an empirical formula is provided that allows to estimate the minimum distance above which near-field coupling can be neglected. For typical geometries at board level, the maximum separation to have a noticeable near field coupling is below 30 mil. © 2013 IEEE.
Schlagworte
multiple scattering
near-field coupling
printed circuit board
signal integrity
via coupling
DDC Class
600: Technik
620: Ingenieurwissenschaften