TUHH Open Research
Help
  • Log In
    New user? Click here to register.Have you forgotten your password?
  • English
  • Deutsch
  • Communities & Collections
  • Publications
  • Research Data
  • People
  • Institutions
  • Projects
  • Statistics
  1. Home
  2. TUHH
  3. Publication References
  4. Layer-by-layer assembly enabled by the anionic p-dopant CN6-CP•-K+: a route to achieve interfacial doping of organic semiconductors
 
Options

Layer-by-layer assembly enabled by the anionic p-dopant CN6-CP•-K+: a route to achieve interfacial doping of organic semiconductors

Publikationstyp
Journal Article
Date Issued
2019-01-04
Sprache
English
Author(s)
Karpov, Yevhen  
Kiriy, Nataliya  
Formanek, Petr  
Zessin, Jakob  
Hambsch, Mike  
Mannsfeld, Stefan  
Lissel, Franziska  
Beryozkina, Tetyana V.  
Bakulev, Vasiliy A.  
Voit, Brigitte  
Kiriy, Anton  
TORE-URI
http://hdl.handle.net/11420/15155
Journal
ACS applied materials & interfaces  
Volume
11
Issue
4
Start Page
4159
End Page
4168
Citation
ACS Applied Materials and Interfaces 11 (4): 4159-4168 (2019-01-30)
Publisher DOI
10.1021/acsami.8b15033
Scopus ID
2-s2.0-85060297554
PubMed ID
30608639
Publisher
Soc.
Highly efficient 2D (interfacial) doping of organic semiconductors, poly(3-hexylthiophene) (P3HT) and TIPS-pentacene, was achieved by a polyelectrolyte-supported layer-by-layer assembly of the dual-mode functional dopant CN6-CP•-K+, having an anionic group for its fixation onto oppositely charged surfaces/molecules as well as electron-deficient groups providing its p-doping ability. Polyelectrolyte-supported dopant layers were used to generate conductive channels at the bottom or at the top of semiconducting films. Unlike to the case of sequentially processed P3HT films doped by F4TCNQ (Moulé, J. Chem. Mater. 2015, 27, 5765; Koech, P. K. J. Mater. Chem. C 2013, 1, 1876; Schwartz, B. J. J. Phys. Chem. Lett. 2015, 6, 4786), the use of more polar CN6-CP•-K+ dopant and ultrathin polycation separation interlayer enables predominantly interfacial kind of doping placement with no or minimal intercalation of the dopant into the semiconductor bulk. The layered structure of the doped film was proved by transmission electron microscopy of the cross-section and it agrees well with other data obtained in this work. The interfacial doping enabled an impressive conductivity of 13 S/cm even for ultrathin P3HT films. We propose to explain the superior efficiency of the interfacial doping compared to the bulk doping in terms of unperturbed morphology of the semiconductor and high mobility of charge carriers, which are spatially separated from the dopant phase.
Subjects
conductivity
interfacial doping
organic semiconductors
P-doping
solution-processable organic devices
DDC Class
540: Chemie
TUHH
Weiterführende Links
  • Contact
  • Send Feedback
  • Cookie settings
  • Privacy policy
  • Impress
DSpace Software

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science
Design by effective webwork GmbH

  • Deutsche NationalbibliothekDeutsche Nationalbibliothek
  • ORCiD Member OrganizationORCiD Member Organization
  • DataCiteDataCite
  • Re3DataRe3Data
  • OpenDOAROpenDOAR
  • OpenAireOpenAire
  • BASE Bielefeld Academic Search EngineBASE Bielefeld Academic Search Engine
Feedback