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Facile spin-coated MoS₂ thin films from a single-source precursor for HER activity
Citation Link: https://doi.org/10.15480/882.15411
Publikationstyp
Journal Article
Date Issued
2025
Sprache
English
TORE-DOI
Journal
Citation
ACS Applied Energy Materials (in Press): (2025)
Publisher DOI
Scopus ID
Publisher
ACS Publications
Hydrogen evolution reaction (HER) is one of the most promising ways to replace the consumption of fossil fuels
with a clean and green energy source. HER requires a suitable material as a catalyst to lower overpotential and minimize energy
consumption. MoS2 is an excellent candidate for the HER because of its suitable band structure. It is an economical and earthabundant
material compared to the standard electrode for HER, i.e., Pt. MoS2 thin films can be engineered to produce active sites for
HER. We prepared large area thin films of MoS2 from a Mo single source precursor (MoCl5) by means of spin coating, followed by
post-annealing (sulfurization) with an additional sulfur source in an Ar/H2 environment. The obtained films have been characterized
by Raman, X-ray diffraction (XRD), UV−vis, and X-ray photoelectron spectroscopy (XPS) before and after post-annealing. The
obtained MoS2 films are found to be active for HER activity. The HER activity for a 10 nm thick MoS2 film is determined at an
overvoltage of 290 mV, while for 50 nm films, HER activity is observed at 369 mV at a current density of 10 mA/cm2. The HER
performance of the thinner films of MoS2 is better than that of the thicker films of MoS2. XPS results show that the obtained MoS2
films have sulfur deficiency (S-vacancies), which is beneficial for HER activity. The Tafel slope extracted from the polarization curve
is 80 mV per decade, which is superior to those of single-crystal MoS2 and other 2D TMD materials.
with a clean and green energy source. HER requires a suitable material as a catalyst to lower overpotential and minimize energy
consumption. MoS2 is an excellent candidate for the HER because of its suitable band structure. It is an economical and earthabundant
material compared to the standard electrode for HER, i.e., Pt. MoS2 thin films can be engineered to produce active sites for
HER. We prepared large area thin films of MoS2 from a Mo single source precursor (MoCl5) by means of spin coating, followed by
post-annealing (sulfurization) with an additional sulfur source in an Ar/H2 environment. The obtained films have been characterized
by Raman, X-ray diffraction (XRD), UV−vis, and X-ray photoelectron spectroscopy (XPS) before and after post-annealing. The
obtained MoS2 films are found to be active for HER activity. The HER activity for a 10 nm thick MoS2 film is determined at an
overvoltage of 290 mV, while for 50 nm films, HER activity is observed at 369 mV at a current density of 10 mA/cm2. The HER
performance of the thinner films of MoS2 is better than that of the thicker films of MoS2. XPS results show that the obtained MoS2
films have sulfur deficiency (S-vacancies), which is beneficial for HER activity. The Tafel slope extracted from the polarization curve
is 80 mV per decade, which is superior to those of single-crystal MoS2 and other 2D TMD materials.
Subjects
2D-material | electrocatalyst | hydrogen evolution reaction (HER) | MoS2 | single source precursor | solution-based deposition | transition metal dichalcogenide (TMD)
DDC Class
541.3: Physical Chemistry
620.11: Engineering Materials
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