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  4. Simple estimation of the effect of hot-carrier degradation on scaled nMOSFETs
 
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Simple estimation of the effect of hot-carrier degradation on scaled nMOSFETs

Publikationstyp
Journal Article
Date Issued
2003-10-01
Sprache
English
Author(s)
Seekamp, A.
Avellán Hampe, Alejandro  
Arbeitsbereich Mikroelektronik (H 4-08)
Schwantes, Stefan  
Krautschneider, Wolfgang  
Integrierte Schaltungen E-9  
TORE-URI
https://hdl.handle.net/11420/48024
Journal
International journal of electronics  
Volume
90
Issue
10
Start Page
607
End Page
612
Citation
International Journal of Electronics 90 (10): 607-612 (2003)
Publisher DOI
10.1080/00207210310001647222
Scopus ID
2-s2.0-1042289082
Publisher
Taylor & Francis
The influence of parasitic charge at the Si-SiO2 interface on the characteristics of n-channel metal oxide semiconductor field effect transistors (nMOSFETs) scaled down to a feature size of 25 nm is studied. The results are that the impact of parasitic charge on threshold voltage and drain current degradation significantly decreases. Additionally, as the hot-electron injection current densities are lowered for scaled-down nMOS transistors, less charge build-up occurs. This opens the perspective to make use of alternative gate dielectrics even if they have a higher interface trap density. These materials offer the advantage of greater dielectric constants than silicon oxide, so that a physically thicker dielectric will limit the gate tunnelling current.
DDC Class
621.3: Electrical Engineering, Electronic Engineering
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