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Polymer gate dielectrics for high performance organic field-effect transistors
Publikationstyp
Conference Paper
Date Issued
2006
Sprache
English
First published in
Number in series
937
Volume
937
Start Page
89
End Page
94
Article Number
0937-M10-05
Citation
MRS Spring Meeting, 2006 : April 17 - 21, 2006, San Francisco, California, USA. - (Materials Research Society Symposium Proceedings ; vol. 937)
Contribution to Conference
Publisher DOI
Scopus ID
Publisher
Materials Research Society
ISBN
978-1-55899-894-0
Solution-processed bottom-gate organic field-effect transistors (OFETs) with different polymeric dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. Dielectric materials of high chemical stability with simple processing conditions were used as gate-insulation in OFETs. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs. © 2006 Materials Research Society.
DDC Class
621.3: Electrical Engineering, Electronic Engineering