A trench DRAM gain cell for high signal charge at reduced cell area

Publikationstyp
Conference Paper
Date Issued
2001
Sprache
English
Author(s)
Krautschneider, Wolfgang  
Integrierte Schaltungen E-9  
Hofmann, F.
TORE-URI
https://hdl.handle.net/11420/47995
Start Page
135
End Page
138
Citation
In: Proceedings of the 31st European Solid-State Device Research Conference : Nuremberg, Germany, 11 - 13 September 2001. - Paris : Frontier Group, 2001. - S. 135-138
Contribution to Conference
31st European Solid-State Device Research Conference, ESSDERC 2001  
Publisher DOI
10.1109/ESSDERC.2001.195219
Scopus ID
2-s2.0-84907511778
Publisher
Frontier Group
ISSN
19308876
ISBN
2914601018
A novel DRAM trench gain cell for high signal charge at a small cell area below 8F2 has been developed. The gain concept allows to decrease significantly the trench depth without sacrifying the cell performance. Demonstrators with full functionality and increased signal charge were processed and experimentally tested. This cell type has the potential for a cell area reduction to 6F2 and further down to 4F2 and less.
DDC Class
621.3: Electrical Engineering, Electronic Engineering