Interface state analysis of mosfets with a modified charge-pumping technique

First published in
Solid state devices  
Number in series
17
Start Page
687
End Page
690
Article Number
5436737
Citation
17th European Solid State Device Research Conference, ESSDERC 1987
Contribution to Conference
17th European Solid State Device Research Conference, ESSDERC 1987  
Publisher Link
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5436737
Scopus ID
2-s2.0-84907811997
Publisher
IEEE Computer Society
ISBN of container
0-444-70477-9
978-0-444-70477-1
In this paper we present a modified charge pumping technique to obtain the energy dependence of interface states of MOSFETs. The steps of gate potential shift periodically between 3 voltage levels. The duration of the gate-mid-level VGMIDgives a precise control of the electron and hole emission times avoiding to generate and measure transition times of trape-zoidal pulses. Furthermore an extension of charge pumping measurements on chains of MOSFETs in parallel is realized. CV measurements at varactors of the same testchip are evaluated and compared to the results of the charge pumping technique.
DDC Class
621.3: Electrical Engineering, Electronic Engineering