Interface state analysis of mosfets with a modified charge-pumping technique

Start Page
687
End Page
690
Article Number
5436737
Citation
In: Giovanni Soncini, Pier Ugo Calzolari (Hrsg.): Solid state devices : proceedings of the 17th European Solid State Device Research Conference, ESSDERC '87, Bologna, Italy, 14-17 September 1987. - Amsterdam ; New York ; New York, N.Y., U.S.A : North-Holland ; Sole distributors for the U.S.A. and Canada, Elsevier Science Pub. Co, 1988. - S. 687-690
Contribution to Conference
17th European Solid State Device Research Conference, ESSDERC 1987  
Publisher Link
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5436737
Scopus ID
2-s2.0-84907811997
Publisher
IEEE Computer Society
ISSN
19308876
ISBN
0444704779
9780444704771
In this paper we present a modified charge pumping technique to obtain the energy dependence of interface states of MOSFETs. The steps of gate potential shift periodically between 3 voltage levels. The duration of the gate-mid-level VGMIDgives a precise control of the electron and hole emission times avoiding to generate and measure transition times of trape-zoidal pulses. Furthermore an extension of charge pumping measurements on chains of MOSFETs in parallel is realized. CV measurements at varactors of the same testchip are evaluated and compared to the results of the charge pumping technique.
DDC Class
621.3: Electrical Engineering, Electronic Engineering