Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal-oxide-semiconductor field-effect transistors

Avellán Hampe, Alejandro; Krautschneider, Wolfgang; Schwantes, Stefan

Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal-oxide-semiconductor field-effect transistors

Publikationstyp

Journal Article

Date Issued

2001-04-30

Sprache

English

Author(s)

Avellán Hampe, Alejandro

Arbeitsbereich Mikroelektronik (H 4-08)

Krautschneider, Wolfgang

Integrierte Schaltungen E-9

Schwantes, Stefan

TORE-URI

https://hdl.handle.net/11420/47996

Journal

Applied physics letters

Volume

78

Issue

18

Start Page

2790

End Page

2792

Citation

Applied Physics Letters 78 (18): 2790-2792 (2001)

Publisher DOI

10.1063/1.1360779

Scopus ID

2-s2.0-0035971671

Publisher

American Institute of Physics

Parallel measurements of random telegraph signals (RTS) in the gate and drain currents of n-metal-oxide-semiconductor field-effect transistors with 1.3-nm-thin gate oxides are presented. RTS appear simultaneously in both currents. Contrary to what could be expected, the signals have opposite signs in the gate and drain currents. A model is proposed to explain this phenomenon by the Schottky effect. The relative amplitude of the signal fluctuation in the gate current is significantly higher than that in the drain current. Therefore, the gate current is a much more sensitive indicator for RTS than the drain current. © 2001 American Institute of Physics.

DDC Class

621.3: Electrical Engineering, Electronic Engineering

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Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal-oxide-semiconductor field-effect transistors