Memristive operation mode of floating gate transistors : a two-terminal MemFlash-cell

A memristive operation mode of a single floating gate transistor is presented. The device resistance varied accordingly to the charge flow through the device. Hysteretic current-voltages including a resistance storage capability were observed. These experimental findings are theoretically supported by a capacitive based model. The presented two-terminal MemFlash-cell can be considered as a potential substitute for any memristive device (especially for reconfigurable logic, cross-bar arrays, and neuromorphic circuits) and is basically compatible with current Si-fabrication technology. The obvious trade-off between a memristive device based on a state-of-the-art silicon process technology and power consumption concerns will be discussed. © 2012 American Institute of Physics.

DDC Class

621.3: Electrical Engineering, Electronic Engineering

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Memristive operation mode of floating gate transistors : a two-terminal MemFlash-cell