A compact ultra-wideband microstrip transition

Publikationstyp
Conference Paper
Date Issued
2017-10-04
Sprache
English
Author(s)
Hansen, Nils  
Radzijewski, Stefan  
Mohncke, Jan Philip  
Jacob, Arne  
Institut
Hochfrequenztechnik E-3  
TORE-URI
http://hdl.handle.net/11420/3888
Journal
IEEE MTT-S International Microwave Symposium digest  
Start Page
727
End Page
729
Article Number
8058676
Citation
IEEE MTT-S International Microwave Symposium Digest: 8058676 (2017-10-04)
Publisher DOI
10.1109/MWSYM.2017.8058676
Scopus ID
2-s2.0-85032476899
Hybrid integration often requires to connecting components with different contact footprints, typical examples being MMICs versus larger drop-in devices. In microstrip technology this calls for different line widths and substrate thicknesses. This paper proposes a novel transition between two microstrip lines of different width and height. The basic concept of the multilayer approach is to gradually adapt the field distribution along the transition while keeping the impedance constant. In simulation the optimized transition exhibits an impedance match in excess of 20 dB from DC to 20 GHz. For verification a back-to-back transition is fabricated and measured. It features more than 13 dB input match and an insertion loss below 1 dB in a bandwidth up to 20 GHz, and the results being in good agreement with simulation.
Subjects
High-Integration
Low-Cost
Microstrip
Multilayer
Transition
Ultra-Wideband