Low-temperature process for manufacturing all polymer thin-film transistors

Volume
2005
Start Page
197
End Page
199
Article Number
1596518
Citation
In: Proceedings of Polytronic 2005, 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics : October 23 - 26, 2005, Hotel Mercure Panorama, Wroclaw, Poland. - Piscataway, NJ : IEEE Operations Center, 2005. - S. 197-199
Contribution to Conference
5th International Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2005  
Publisher DOI
10.1109/POLYTR.2005.1596518
Scopus ID
2-s2.0-33847178705
Publisher
IEEE
ISBN
0780395530
9780780395534
We report a low-temperature process to manufacture an all polymer thin-film transistor avoiding curing and annealing temperatures higher than 80°C. This aspect of energy efficiency directly supports the low-cost feature of organic devices in fabrication. The process is being demonstrated by using commercially available polymers such as poly(ethylenedioxythiophene)/ polystyrenesulfonate dispersion representing the source, drain and gate electrode, Norland optical adhesive NOA 75 as the gatedielectric and regioregular poly(3-hexylthiophene-2,5-diyl) as the semiconducting polymer - all on a polyvinyl chloride substrate. Functional devices with a channel length of 25 urn and a channel width of 1 mm to 5 mm have been realized. © 2005 IEEE.
Subjects
Low-temperature process
Organic TFT
DDC Class
621.3: Electrical Engineering, Electronic Engineering