Low-Power Ka- and V-Band Miller Compensated Amplifiers in 130-nm SiGe BiCMOS Technology

Start Page
71
End Page
74
Citation
16th European Microwave Integrated Circuits Conference (EuMIC 2021)
Contribution to Conference
16th European Microwave Integrated Circuits Conference, EuMIC 2021  
Publisher DOI
10.23919/EuMIC50153.2022.9783785
Scopus ID
2-s2.0-85126755620
This paper presents the design of two low-power differential amplifiers at 30 GHz and 60 GHz in a 130-nm SiGe BiCMOS technology. The amplifiers use cross-connected compensation transistors in a common-emitter configuration to improve the gain-bandwidth product. This technique also provides unconditional stability which is ensured by analyzing the core circuit at the process corners for various operation temperatures. The design procedure is verified by experimental results which show that the 30 GHz amplifier consumes 5.3 mW and has a peak small-signal gain of 14.9 dB, while the 60 GHz amplifier consumes 12 mW with a peak small-signal gain of 12.5 dB. In addition, 6 dBm output power is measured from the 30 GHz amplifier at 1 dB compression and more than 10 dBm output power is expected from the 60 GHz amplifier. The low power consumption, high gain, and high linearity of the proposed amplifier blocks show that the described approach is promising for low-power and high-efficiency millimeter-wave RF frontends.
Subjects
integrated circuit
low-power
Miller effect
mm-wave
silicon-germanium