A physical-based PSPICE compact model for poly(3-hexylthiophene) organic field-effect transistors

Journal
IEEE transactions on electron devices  
Volume
55
Issue
7
Start Page
1776
End Page
1781
Citation
IEEE Transactions on Electron Devices 55 (7): 1776-1781 (2008-07)
Publisher DOI
10.1109/TED.2008.925339
Scopus ID
2-s2.0-46649102451
Publisher
IEEE
A PSPICE model for organic thin-film transistors (OFETs) employing poly(3-hexylthiophene-2,5-diyl) (P3HT) is derived. This model is based on the standard MOSFET Berkeley Short-channel IGFET Model equations, where the voltage dependences of the charge carrier mobility and the bulk conductivity are modeled by additional voltage-controlled current sources. The model requires only five additional parameters, which can be extracted from the output characteristics of the device. The model equations have been verified by device simulations, and the simulation results have been compared with measurements of P3HT OFETs.
Subjects
Compact model
Organic thin-film transistors OFETs)
Poly(3-hexylthiophene) (P3HT)
SPICE
DDC Class
621.3: Electrical Engineering, Electronic Engineering