Tetragonal phase stabilization by doping as an enabler of thermally stable HfO2 based MIM and MIS capacitors for sub 50nm deep trench DRAM

Publikationstyp
Conference Paper
Date Issued
2006
Sprache
English
Author(s)
Böschke, Tim S.
Govindarajan, S.
Fachmann, Christian
Heitmann, Johannes
Avellan, Alejandro
Schröder, Uwe Paul
Kudelka, Stephan  
Kirsch, Paul D.
Krug, Cristiano
Hung, Pui Yee
Song, Seungchul
Ju, Byung-sun
Price, Jimmy M.
Pant, Gaurang K.
Gnade, Bruce E.
Krautschneider, Wolfgang  
Nano- und Medizinelektronik E-9 (H)  
Lee, Byoung-hun
Jammy, Rajarao
TORE-URI
https://hdl.handle.net/11420/48068
Article Number
4154446
Citation
2006 International Electron Devices Meeting, San Francisco, CA, USA, 2006, pp. 1-4, art. no. 4154446
Contribution to Conference
International Electron Devices Meeting, IEDM 2006  
Publisher DOI
10.1109/IEDM.2006.347011
Scopus ID
2-s2.0-46049110745
Publisher
IEEE Service Center
ISBN
1-4244-0438-X
1-4244-0439-8
We show for the first time that control of the crystalline phases of HfO2 by tetravalent (Si) and trivalent (Y,Gd) dopants enables significant improvements in the capacitance equivalent thickness (CET) and leakage current in capacitors targeting deep trench (DT) DRAM applications. By applying these findings, we present a MIM capacitor meeting the requirements of the 40 nm node. A CET <1.3 nm was achieved at the deep trench DRAM thermal budget of 1000°C.
DDC Class
621.3: Electrical Engineering, Electronic Engineering