Low Frequency and Low Power Oscillator using Thyristor-Based Delay Elements for Optoelectronic Implants

Citation
30th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2023)
Contribution to Conference
30th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2023
Publisher DOI
10.1109/ICECS58634.2023.10382932
Scopus ID
2-s2.0-85183581679
ISBN
9798350326499
This paper presents a low-power, in 180 nm CMOS HV process integrated oscillator, that is capable of creating low frequencies for wirelessly controllable LED drivers in optoelectronic brain implants. The oscillator system consists of a thyristor-based delay element with a power consumption of 4.65nW and a delay time of 13.31 ms. The delay is precisely controlled by a 4.13nA resistor-less and temperature-compensated current reference. Simulations revealed a frequency of 12.56 Hz with a temperature coefficient of 262ppn/°C between -20°C and 120°C and an overall power consumption of 120nW.
Subjects
current reference
low frequency oscillator
low power delay element
resistor-less beta multiplier
thyristor