A linear 4W power amplifier at K-band using 250nm AlGaN/GaN HEMTs

Start Page
157
End Page
160
Article Number
6687809
Citation
European Microwave Conference (EuMC 2013)
Contribution to Conference
European Microwave Week, EuMW 2013  
This paper presents the design, realization, and measured performance of a K-band high power amplifier using an AlGaN/GaN HEMT on semi-insulating SiC technology with a gate length of 250 nm. The amplifier is a two-stage design with a staging ratio of 1:2. It employs a 6×90 μm driver cell and two 6×90 μm cells in the second stage. Using a drain supply voltage of 28V, the amplifier delivers a saturated output power of >4W (36 dBm) and exhibits a peak PAE of 34 %, both at a frequency of 22 GHz. When biased for peak PAE, the linear gain is 16 dB. Intermodulation measurements at 22GHz with 1MHz two-tone spacing show a third-order (OIP3) and fifth-order output intercept point (OIP5) of 40dBm and 35 dBm, respectively. A third-order intermodulation ratio C/IM3 of >16 dB is achieved at an output power of 1W per carrier. © 2013 EuMA.
Subjects
Gallium nitride
High power amplifiers
Intermodulation distortion
K-band
MMICs
Satellite communication
DDC Class
600: Technik
620: Ingenieurwissenschaften