Integration and characterisation of Schottky diodes with a pre-amplifier for THz applications

Publikationstyp
Conference Paper
Date Issued
2020-11-08
Sprache
English
Author(s)
Hajo, Ahid S.  
Yilmazoglu, Oktay  
Kuppers, Franko  
Kusserow, Thomas  
TORE-URI
http://hdl.handle.net/11420/9673
Start Page
943
End Page
944
Article Number
9370830
Citation
International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020)
Contribution to Conference
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW 2020  
Publisher DOI
10.1109/IRMMW-THz46771.2020.9370830
Scopus ID
2-s2.0-85103220991
This contribution deals with the investigation and characterisation of fully integrated broadband Terahertz (THz) Schottky diodes using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) layers. The combination of InGaAs and metallic NWs shows almost 7 times higher forward current than the metallic NW with GaAs at 0.27 V with a capacitance of 0.5 fF and a series resistance of 29Omega. The highest calculated cut-off frequency of 10.7 THz was obtained for a NW contacted vertical InGaAs diode.