Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors

Journal
Applied physics letters
Volume
90
Issue
8
Article Number
083501
Citation
Applied Physics Letters 90 (8): 083501 (2007)
Publisher DOI
10.1063/1.2591314
Scopus ID
2-s2.0-33847191330
Publisher
American Institute of Physics (AIP)
The authors report on a solution-processed composite film based on poly(vinylidene fluoride/trifluoroethylene) copolymer and barium titanate (BT) nanopowder, to be used as ferroelectric high- κ gate insulation in organic field-effect transistors (OFETs). Flexible films of up to 50 vol % BT powder content are produced by preparing homogeneous dispersion of the powder in the polymer solutions. The films exhibited high specific volume resistivities combined with dielectric constants of up to 51.5 at 1 kHz. Low-voltage OFETs with ferroelectric hysteresis and good memory retention properties were demonstrated by using the composite films. © 2007 American Institute of Physics.
DDC Class
621.3: Electrical Engineering, Electronic Engineering