Fabrication and characterization of high power Gallium Nitride based terahertz Gunn diodes

Publikationstyp
Conference Paper
Date Issued
2020-11-08
Sprache
English
Author(s)
Hajo, Ahid S.  
Yilmazoglu, Oktay  
Dadgar, Armin  
Kuppers, Franko  
Kusserow, Thomas  
TORE-URI
http://hdl.handle.net/11420/9676
Start Page
773
End Page
774
Article Number
9370977
Citation
International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020)
Contribution to Conference
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW 2020  
Publisher DOI
10.1109/IRMMW-THz46771.2020.9370977
Scopus ID
2-s2.0-85103197852
In this paper, we report the fabrication and characterization of a THz Gunn source based on Gallium Nitride (GaN) with side-contact and field-plate technologies. This source works stable at operating voltages up to 20 V due to good passivation layer and good heat sink to the GaN substrate. The GaN-based Gunn diode has relatively high forward current of 0.9 A and a high current drop of about 50 mA for higher frequency and output power.