Options
Fabrication and characterization of high power Gallium Nitride based terahertz Gunn diodes
Publikationstyp
Conference Paper
Publikationsdatum
2020-11-08
Sprache
English
TORE-URI
Start Page
773
End Page
774
Article Number
9370977
Citation
International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020)
Contribution to Conference
Publisher DOI
Scopus ID
In this paper, we report the fabrication and characterization of a THz Gunn source based on Gallium Nitride (GaN) with side-contact and field-plate technologies. This source works stable at operating voltages up to 20 V due to good passivation layer and good heat sink to the GaN substrate. The GaN-based Gunn diode has relatively high forward current of 0.9 A and a high current drop of about 50 mA for higher frequency and output power.