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Electronic States in Three Dimensional Quantum Dot/Wetting Layer Structures
Citation Link: https://doi.org/10.15480/882.51
Publikationstyp
Preprint
Date Issued
2005-12
Sprache
German
Author(s)
Voß, Heinrich
Institut
TORE-DOI
First published in
Preprints des Institutes für Mathematik;Bericht 95
Number in series
95
Citation
Preprint. Published in ICCSA 2006: Computational Science and Its Applications - ICCSA 2006 pp 684-693
Publisher DOI
Scopus ID
Although self-assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard-wall 3D confinement potential. By comparing quantum dots with wetting layers and a dot without a wetting layer, we find that the presence of a wetting layer may effect the electronic structure essentially.
Subjects
quantum dot
electronic structure
electron states
computer simulation
nonlinear eigenproblem
DDC Class
510: Mathematik
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