Electronic States in Three Dimensional Quantum Dot/Wetting Layer Structures

Publikationstyp
Preprint
Publikationsdatum
2005-12
Sprache
German
Author
Voß, Heinrich 
Betcke, Marta 
Institut
Mathematik E-10 
DOI
10.15480/882.51
TORE-URI
http://tubdok.tub.tuhh.de/handle/11420/53
First published in
Preprints des Institutes für Mathematik 
Preprints des Institutes für Mathematik;Bericht 95
Number in series
95
Citation
Preprint. Published in ICCSA 2006: Computational Science and Its Applications - ICCSA 2006 pp 684-693
Publisher DOI
10.1007/11751540_72
Scopus ID
2-s2.0-33745957458
Although self-assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard-wall 3D confinement potential. By comparing quantum dots with wetting layers and a dot without a wetting layer, we find that the presence of a wetting layer may effect the electronic structure essentially.
Schlagworte
quantum dot
electronic structure
electron states
computer simulation
nonlinear eigenproblem
DDC Class
510: Mathematik
Lizenz
http://rightsstatements.org/vocab/InC/1.0/
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