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  4. Investigation of the high temperature stability of TiN-Al2O3-TiN capacitors for sub 50nm deep trench DRAM
 
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Investigation of the high temperature stability of TiN-Al2O3-TiN capacitors for sub 50nm deep trench DRAM

Publikationstyp
Conference Paper
Date Issued
2006
Sprache
English
Author(s)
Böscke, Tim S.  
Nano- und Medizinelektronik E-9 (H)  
Kudelka, Stephan  
Sänger, Annette  
Müller, Jörg  
Mikrosystemtechnik E-7  
Krautschneider, Wolfgang  
Nano- und Medizinelektronik E-9 (H)  
TORE-URI
https://hdl.handle.net/11420/48374
Start Page
391
End Page
394
Article Number
4099938
Citation
Proceedings of the 36th European Solid-State Device Research Conference, 2006, ESSDERC 2006, 19 - 21 Sept. 2006, Montreux, Switzerland. - Seite 391-394
Contribution to Conference
36th European Solid-State Device Research Conference, ESSDERC 2006  
Publisher DOI
10.1109/essder.2006.307720
Scopus ID
2-s2.0-84957863714
Publisher
IEEE
ISBN
1-4244-0301-4
978-1-4244-0301-1
This paper deals with the investigation of mechanisms leading to a degradation of the electrical properties of titanium nitride - aluminum oxide - titanium nitride capacitors at high temperatures. Several degradation mechanisms could be identified by thorough electrical and physical characterization. The findings will serve as a future guide to build thermally stable MIM capacitors.
DDC Class
621.3: Electrical Engineering, Electronic Engineering
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