Interface characteristics between tungsten silicide electrodes and thin dielectrics

Publikationstyp
Journal Article
Date Issued
2001
Sprache
English
Author(s)
Sell, Bernhard  
Willer, Josef
Pomplun, K.
Sänger, Annette  
Schumann, Dirk  
Krautschneider, Wolfgang  
Integrierte Schaltungen E-9  
TORE-URI
https://hdl.handle.net/11420/47979
Journal
Microelectronic engineering  
Volume
55
Issue
1-4
Start Page
197
End Page
203
Citation
Microelectronic Engineering 55 (1-4): 197-203 (2001)
Publisher DOI
10.1016/S0167-9317(00)00448-2
Scopus ID
2-s2.0-0034833212
Publisher
Elsevier
In today's ULSI technology there is an increasing demand in metal electrodes for storage capacitors and transistors. In this publication we present an investigation of MOS capacitor structures with CVD tungsten silicide (WSix) as metal electrode in conjunction with silicon dioxide (SiO2) and oxidized nitride (NO). Bulk silicon and poly silicon were used as second electrode, respectively. Tungsten silicide has been used both as gate electrode and as bottom electrode. For both cases thermal stability up to 780 °C with low leakage current has been shown. Band discontinuities between SiO2 and WSix were estimated from current-voltage measurements.
DDC Class
621.3: Electrical Engineering, Electronic Engineering