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Temperature dependence of the hard breakdown current of MOS capacitors
Publikationstyp
Conference Paper
Date Issued
2002
Sprache
English
Author(s)
Arbeitsbereich Mikroelektronik (H 4-08)
Sell, Ben
Start Page
463
End Page
466
Citation
In: Proceedings of the 32nd European Solid-State Device Research Conference : Firenze, Italy, 24 - 26 September 2002 ; [jointly organized with the European Solid-State Circuits Conference, ESSCIRC 2002] . - Bologna : Univ., 2002. - S. 463-466
Contribution to Conference
Publisher DOI
Scopus ID
Publisher
Bolognia University
ISSN
19308876
ISBN
8890084782
I-V curves as a function of temperature of broken down n- and p-type MOS capacitors with different oxide thicknesses are presented. In accumulation, a crossover of the temperature dependent curves is observed. At low voltages the hard breakdown current increases with temperature whereas it decreases with temperature for higher voltages. This behaviour can be straightforwardly linked to the available charge for conduction at the electrodes. MINIMOS simulations as well as theoretical considerations were performed that clearly support this idea.
DDC Class
621.3: Electrical Engineering, Electronic Engineering