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Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors
Publikationstyp
Journal Article
Date Issued
2013-01-21
Sprache
English
Author(s)
TORE-URI
Journal
Volume
105
Start Page
74
End Page
76
Citation
Microelectronic Engineering (105): 74-76 (2013)
Publisher DOI
Scopus ID
Publisher
Elsevier
We report the synthesis and properties of fast photo-cured polymer dielectrics used as top gate insulators in organic field-effect transistors (OFETs). Two thiol functionalized compounds and a vinyl ether monomer were used to formulate thiol-ene polymers. The kinetic of the photo-curing of these formulations was determined by monitoring the curing process by FT-IR spectroscopy. Guided by measurements on metal-insulator-metal and metal-insulator-semiconductor structures, we determined the composition of the thiol-ene polymer and the optimal time of exposure to UV-irradiation to fabricate high performance poly(3-hexylthiophene)-based OFETs. We cured a mixture of a mercapto-functionalized polysiloxane produced with sol-gel process, 1,4-cyclohexanedimethanol divinyl ether and irgacure 127 in 15 s. The produced transistors have high on/off ratios of 105. The OFETs showed a field effect mobility of 10-2 cm2 V-1 s-1 and low threshold voltage of -3 V.
Subjects
Gate dielectric
Insulator
Organic field-effect transistors
Photo-curing
Thiol-ene
DDC Class
600: Technik
620: Ingenieurwissenschaften