A fully integrated negative output voltage charge pump for implantable single photon imagers

Enthalten in
IEEE transactions on circuits and systems II: Express Briefs 
Volume
71
Issue
3
Start Page
1566
End Page
1570
Citation
IEEE Transactions on Circuits and Systems II: Express Briefs 71 (3): 1566-1570 (2024-03-01)
Publisher DOI
10.1109/TCSII.2023.3342039
Scopus ID
2-s2.0-85180289680
Publisher
IEEE
In this brief, a fully integrated inverting voltage converter for biasing complementary metal-oxide-semiconductor integrated single-photon avalanche diodes is presented. The design uses a dual-chain inverting Dickson charge pump architecture to generate a negative high voltage output from a single positive supply with a voltage gain factor larger than five, reaching a peak conversion efficiency of up to 20 %. A closed-loop controller is implemented for output stabilization. At a set output voltage of text-series-to-math-18for the used diodes, a maximum output power of text-series-to-math500with a conversion efficiency of 18 % can be achieved. Relying solely on metal sandwich capacitors, the design is resilient to continuous negative high voltage effects and can be used in medical implantable devices requiring long-term reliability. Due to the full integration of all components, it is suitable for low-power implantable medical systems and paves the way towards fully integrated, implanted in-body sensing systems using single-photon avalanche diodes that require negative high voltage biasing. This opens up new fields for uses of high precision and fluorescence imaging in portable devices, not limited to medical devices.
Schlagworte
biomedical
Capacitors
charge pump
Charge pumps
CMOS
Dickson
implants
Integrated circuits
inverting
Metals
negative high voltage
Single-photon avalanche diodes
SPAD
Switches
Voltage
voltage converter
DDC Class
620: Engineering
621: Applied Physics