Post hard breakdown conduction in MOS capacitors with silicon and aluminum oxide as dielectric

Publikationstyp
Journal Article
Date Issued
2008-04-01
Sprache
English
Author(s)
Avellán Hampe, Alejandro  
Jakschik, Stefan
Tippelt, Birgit
Kudelka, Stephan  
Krautschneider, Wolfgang  
Nano- und Medizinelektronik E-9 (H)  
TORE-URI
https://hdl.handle.net/11420/47977
Journal
IEEE electron device letters  
Volume
29
Issue
4
Start Page
366
End Page
368
Citation
IEEE Electron Device Letters 29 (4): 366-368 (2008-03-21)
Publisher DOI
10.1109/LED.2008.917627
Scopus ID
2-s2.0-41849102027
I-V curves as a function of voltage and temperature of MOS capacitors with silicon oxide and aluminum oxide after dielectric breakdown are presented. A different temperature behavior in accumulation is observed. The samples with aluminum oxide show an entirely positive temperature dependence, whereas the samples with silicon oxide have a crossover of the temperature dependent curves. This difference of the two sample types is attributed to the charge distribution according to the material of the breakdown spot, silicon for the case of silicon oxide, and aluminum for aluminum oxide. Thus, in the first case, a p-n junction is formed while a Schottky contact is created in the latter case. Atlas simulations and TEM analysis are presented that confirm this hypothesis. © 2008 IEEE.
Subjects
Current
Dielectric breakdown
MOS devices
DDC Class
621.3: Electrical Engineering, Electronic Engineering