Modeling random telegraph signals in the gate current of metal-oxide-semiconductor field effect transistors after oxide breakdown

The study presents the measurement data of random telegraph signals (RTS) in the gate current of n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) after oxide breakdown. Two types of behavior were observed of the time constants and the relative amplitudes of the signals as a function of gate voltage. A theory is developed relating time constants and relative amplitudes of the fluctuations to the energetic and geometric trap location in the oxide.

DDC Class

621.3: Electrical Engineering, Electronic Engineering

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Modeling random telegraph signals in the gate current of metal-oxide-semiconductor field effect transistors after oxide breakdown