A multilayer substrate integrated 3 dB power divider with embedded thick film resistor

Publikationstyp
Conference Paper
Date Issued
2015-12-02
Sprache
English
Author(s)
Rave, Christian  
Jacob, Arne  
Institut
Hochfrequenztechnik E-3  
TORE-URI
http://hdl.handle.net/11420/7227
Start Page
482
End Page
485
Article Number
7345805
Citation
European Microwave Week 2015, EuMW: 7345805 (2015-12-02)
Contribution to Conference
European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015  
Publisher DOI
10.1109/EuMC.2015.7345805
Scopus ID
2-s2.0-84964323883
A 3 dB power divider/combiner in substrate integrated waveguide (SIW) technology is presented. The divider consists of an E-plane SIW bifurcation with an embedded thick film resistor. The transition divides a full-height SIW into two SIWs of half the height. The resistor provides isolation between these two. The divider is fabricated in a multilayer process using high frequency substrates. For the resistor carbon paste is printed on the middle layer of the stack-up. Simulation and measurement results are presented. The measured divider exhibits an isolation of better than 22 dB within a bandwidth of more than 3GHz at 20 GHz.