Comparison of second-harmonic matching of AlGaN/GaN HEMTs at K-band

Publikationstyp
Conference Paper
Date Issued
2014-10
Sprache
English
Author(s)
Friesicke, Christian  
Quay, Rüdiger  
Jacob, Arne  
Institut
Hochfrequenztechnik E-3  
TORE-URI
http://hdl.handle.net/11420/8342
Start Page
1344
End Page
1347
Article Number
6986693
Citation
European Microwave Week (EuMW 2014), European Radar Conference (EuRAD 2014)
Contribution to Conference
European Microwave Week, EuMW 2014, European Radar Conference, EuRAD 2014  
Publisher DOI
10.1109/EuMC.2014.6986693
Scopus ID
2-s2.0-84929243891
ISBN of container
978-287487035-4
This paper presents a comparative study of input and output second-harmonic matching applied to 0.25 μm Al-GaN/GaN HEMTs on s.-i. SiC substrates. The study focuses on the technology's use at K-band, which is close to the maximum usable frequency for high-power amplifier design. Four power amplifier MMICs using different second-harmonic matching schemes are compared in terms of PAE and output power. The results show the relative improvement of power and efficiency that is gained by the inclusion of second-harmonic matching in the design but also the impact on the power/efficiency bandwidth.
Subjects
Gallium nitride
high power amplifiers
K-band
MMICs
satellite communication
Funding(s)
Leistungsverstärker für die Raumfahrt auf GaN Elektronik