Impact of soft and hard breakdown on analog and digital circuits

Publikationstyp
Journal Article
Publikationsdatum
2004-12-01
Sprache
English
Author
Avellán Hampe, Alejandro 
Arbeitsbereich Mikroelektronik (H 4-08)
Krautschneider, Wolfgang 
Integrierte Schaltungen E-9 
TORE-URI
https://hdl.handle.net/11420/48034
Enthalten in
IEEE transactions on device and materials reliability 
Volume
4
Issue
4
Start Page
676
End Page
680
Citation
IEEE Transactions on Device and Materials Reliability 4 (4): 676-690 (2004)
Publisher DOI
10.1109/TDMR.2004.836729
Scopus ID
2-s2.0-13444262133
The influence of gate oxide breakdown of one MOS transistor on the functionality of simple analog and digital circuits is studied. The main changes in the transistor behavior such as the additional gate current as well as transconductance and threshold voltage degradation are pointed out and their respective impact on circuit characteristics is analyzed. With this approach, it is possible to identify critical transistors during the design stage and implement appropriate countermeasures. Depending on the application, some circuits may be functional even after breakdown of one of their transistors.
Schlagworte
Analog circuits
Dielectric breakdown
Digital circuits
Modeling
MOSFETs
DDC Class
621.3: Electrical Engineering, Electronic Engineering