Impact of free-carrier electric-field screening on the transmissivity of long low-loss p-i-n silicon waveguides

Publikationstyp
Conference Paper
Publikationsdatum
2013
Sprache
English
Author
Renner, Hagen 
Institut
Optische und Elektronische Materialien E-12 
TORE-URI
http://hdl.handle.net/11420/5904
Citation
Integrated photonics research, silicon and nanophotonics : part of Advanced photonics ; 14 - 17 July 2013, Rio Grande, Puerto Rico, United States ... / OSA, The Optical Society. - Washington DC : OSA, 2013.
Contribution to Conference
IPRSN 2013, Rio Grande, Puerto Rico, USA, 14 July - 17 July 2013 
Publisher
OSA, The Optical Society
We show analytically for long low-loss p-i-n silicon waveguides that upshifting the electric-fieldscreening threshold intensity simultaneously requires an adequate reduction of the low-intensity free-carrier lifetime to improve the high-intensity transmissivity. © 2011 OSA.
DDC Class
600: Technik
620: Ingenieurwissenschaften