Consistent model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides

Journal
Microelectronic engineering  
Volume
72
Issue
1-4
Start Page
136
End Page
139
Citation
Microelectronic Engineering 72 (1-4): 136-139 (2004)
Publisher DOI
10.1016/j.mee.2003.12.029
Scopus ID
2-s2.0-1642618944
Publisher
Elsevier
The voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides in MOS structures was investigated. Measurements performed on p- and n-type substrate samples with different oxide thicknesses were compared, and the results analyzed within the framework of the quantum point contact model for dielectric breakdown. The model has been extended so as to include the thermal vibrations of the atoms that form the constriction's bottleneck. A new interpretation of the model parameters, in connection with the potential drops distribution, is discussed.
Subjects
Breakdown
Gate oxide
Reliability
Soft breakdown
DDC Class
621.3: Electrical Engineering, Electronic Engineering