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Controlling transport properties at LaFeO₃/SrTiO₃interfaces by defect engineering
Publikationstyp
Journal Article
Date Issued
2021-06-01
Sprache
English
Author(s)
Volume
33
Issue
24
Article Number
245001
Citation
Journal of Physics Condensed Matter 33 (24): 245001 (2021-06-01)
Publisher DOI
Scopus ID
The formation of conductive LaFeO₃/SrTiO₃ interfaces is first time reported by pulsed laser deposition via controlling the defects of SrTiO₃, which are closely related to the surface of substrate. It is found that the interfaces grown on SrTiO₃ substrates without terraces exhibit the two dimensional electron gas. Moreover, the conductive interfaces show a resistance upturn at low temperatures which is strongly diminished by light irradiation. These interfaces favor the persistent photoconductivity, and the enormous value of relative change in resistance, about 60 185.8%, is also obtained at 20 K. The experimental results provide fundamental insights into controlling the defects at conductive interfaces of oxides and paving a way for complex-oxides based optoelectronic devices.
Subjects
Conductive interface
LaFeO /SrTiO heterointerfaces 3 3
Persistent photoconductivity
Pulsed laser deposition
DDC Class
540: Chemistry
620: Engineering